course-details-portlet

FE8108

Ferroelectric and Dielectric Materials in Modern Microelectronics

Credits 7.5
Level Doctoral degree level
Course start Autumn 2011
Duration 1 semester
Language of instruction English
Examination arrangement Oral examination

About

About the course

Course content

The subjects to be treated include: electrical polarization of solid media; dielectric vs. ferroelectric materials; phenomenological theories; atomistic / soft mode models; electric and electromechanical properties; non-linear optical properties; applications: non-volatile memories (Fe-DRAMs), sensors and actuators; high - k materials; epitaxial growth of oxides on silicon; technological challenges, and novel field effect devices.

Learning outcome

The course is designed to give in-depth understanding of ferroelectricity and its applications in memory technology and novel microelectronic devices. Knowledge: a thorough understanding of the physics describing dielectrics and ferroelectric materials, with focus on the functionality, hoe to synthesize the materials, size-effects, and interface effects Skills: The candidate shall get practice in actively using the obtained knowledge in order to describe factual devise, and to analyze and understand future needs within the field. Competence: The candidate shall be able to put the themes of the course in a general broad technological, economical, societal context. The candidate shall be familiar with ethical dilemmas within the field.

Learning methods and activities

Lecturers, homeasignments, student seminars and kolloqiums.

Compulsory assignments

  • Student seminar

Course materials

Articles and notes.

Subject areas

  • Technological subjects

Contact information

Course coordinator

Lecturers

Department with academic responsibility

Department of Electronic Systems

Examination

Examination

Examination arrangement: Oral examination
Grade: Letters

Ordinary examination - Autumn 2011

Oral examination
Weighting 100/100 Date 2011-12-03

Ordinary examination - Spring 2012

Oral examination
Weighting 100/100