course-details-portlet

FE8124

Modeling of Semiconductor Devices

Credits 7.5
Level Doctoral degree level
Course start Autumn 2010
Duration 1 semester
Language of instruction English
Examination arrangement Oral examination

About

About the course

Course content

This course will be taught every second year, starting in Fall 2008. The coursecovers large signal and small signalmodeling of important semiconductordevices. Emphasis is placed on Si MOSFETs and on heterostructure devices such as HEMT and HBT. Issues of interest are physical desctoption, equivalent circuit representation, high-frequency behavior. model requirements for RF applications, intrinsic and extrinsic model elements, paramter extraction, and noise modeling.

Learning outcome

The course shall give insight into device modeling for use in circuit and device design, wieh emphasis on RF applications

Learning methods and activities

Lectures and exercises.

Required previous knowledge

None

Course materials

T. Ytterdal, Y. Cheng and T. A. Fjeldly, “Device Modeling for Analog and RF CMOS Design, Wiley2003, ISBN 0-471-49869-6.
F. Ali and A. Gupta, “HEMTs and HBTs: Devices, Fabrication , and Circuits”, Artech House, 1991, ISBN 0-89006-401-6.
Journal articles

Subject areas

  • Electronics
  • Physical Electronics
  • Technological subjects

Contact information

Course coordinator

Lecturers

Department with academic responsibility

Department of Electronic Systems

Examination

Examination

Examination arrangement: Oral examination
Grade: Letters

Ordinary examination - Autumn 2010

Oral examination
Weighting 100/100 Date 2010-12-02

Ordinary examination - Spring 2011

Oral examination
Weighting 100/100