All courses

Not a part of this year 2011/2012

Course content

This course covers large signal and small signal modeling of important semiconductor devices. Emphasis is placed on Si MOSFETs and on heterostructure devices such as HEMT and HBT. Issues of interest are physical description, equivalent circuit representation, high-frequency behavior, model requirements for RF applications, intrinsic and extrinsic model elements, paramter extraction, and noise modeling.

Learning outcome

Knowledge: The course gives insight into device modeling for use in circuit and device design, with emphasis on RF applications.
Skills: Development and application of device models for use in advanced circuit design.
General competence: Understanding of the physical basis on which the device models are based, and insight into the model limitations.

Learning methods and activities

Lectures. Exercises. Oral exam.

Compulsory assignments

Recommended previous knowledge

TFE4100 Electric circuits or equivalent.

Required previous knowledge

None

Course materials

T. Ytterdal, Y. Cheng and T. A. Fjeldly, “Device Modeling for Analog and RF CMOS Design, Wiley2003, ISBN 0-471-49869-6.
F. Ali and A. Gupta, “HEMTs and HBTs: Devices, Fabrication , and Circuits”, Artech House, 1991, ISBN 0-89006-401-6.
Journal articles