FE8111 - Molecular Beam Epitaxy


This course is no longer taught and is only available for examination. For a complete course description, see previous academic years.

Examination arrangement

Examination arrangement: Oral examination
Grade: Passed/Failed

Evaluation Weighting Duration Grade deviation Examination aids
Oral examination 100/100 D

Course content

Sources of atomic and molecular beams, high-vacuum growth and processing systems, characterization techniques, MBE growth processes of lattice-matched structures, growth processes in strained-layer MBE, MBE growth processes of nanostructures, material-related growth characteristics in MBE.

Learning outcome

A. Knowledge: This course shall provide the theoretical basis for using Molecular Beam Epitaxy to produce advanced layered thin films or nanostructures of compound semiconductors for electronic and optoelectronic devices, as well as the theoretical basis for important characterization techniques for synthesized structures. B. Skills: To be able to design and produce advanced layered thin films of compound semiconductors using Molecular Beam Epitaxy.

Learning methods and activities

Lectures, student seminars, exercises, laboratory exercises, laboratory demonstrations, self study.

Compulsory assignments

  • Laboratory work
  • Student seminar

Specific conditions

Compulsory activities from previous semester may be approved by the department.

Required previous knowledge

General knowledge of physics and mathematics at university level.

Course materials

M.A. Herman and H. Sitter: "Molecular Beam Epitaxy; Fundamentals and Current Status", Springer-Verlag, Berlin, 1996 (2nd edition). ISBN 3-540-60594-0. Selected journal publications.

More on the course



Version: 1
Credits:  7.5 SP
Study level: Doctoral degree level


Language of instruction: English

Location: Trondheim

Subject area(s)
  • Materials Science and Engineering
  • Solid State Physics
  • Physical Electronics
  • Physics
  • Technological subjects
Contact information
Course coordinator:

Department with academic responsibility
Department of Electronic Systems


Examination arrangement: Oral examination

Term Status code Evaluation Weighting Examination aids Date Time Examination system Room *
Autumn ORD Oral examination 100/100 D
Room Building Number of candidates
  • * The location (room) for a written examination is published 3 days before examination date. If more than one room is listed, you will find your room at Studentweb.

For more information regarding registration for examination and examination procedures, see "Innsida - Exams"

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