TFE4146 - Semiconductor Devices


Examination arrangement

Examination arrangement: School exam
Grade: Letter grades

Evaluation Weighting Duration Grade deviation Examination aids
School exam 100/100 4 hours C

Course content

This course offers a detailed introduction to the principal categories of semiconductor devices in modern microelectronics. The following topics will be discussed; charge carrier statistics and transport, luminescence, photoconductivity, p-n junctions, metal- semiconductor junctions, diodes, field-effect transistors (MOSFET), bipolar junction transistors (BJT), and selected photonic semiconductor devices.

Learning outcome

Targeted expertise

The candidate has:

  • basic insight in the physics and operation principles of the most important semiconductor devices encountered in modern microelectronics.
  • basic understanding of electronic structure, charge carrier statistics, and carrier (elctron and hole)transport in semiconductors.
  • basic insight in the fabrication technology of semiconductor devices and integrated circuits.
  • basic understanding of the charge transport in p-n junctions and metal-semiconductor contacts - basic understanding of the working principles of field effect (MOSFET) and bipolar junction (BJT) transistors.

Technical skills

The candidate will:

  • know how to calculate voltages and currents in existing electronic semiconductor devices under different biasing conditions
  • know how to draw up and analyze circuit models for field effect and bipolar junction transistors
  • know the fabrication technology and be able figure out the principles of operation of new and future semiconductor-based electronic and photonic devices.

General expertise

The candidate has:

  • the required skills in mathematics, physics, and electronic circuits for quantitative analysis of defined electronic system components.
  • the required knowledge for more advanced studies in design of electronic circuits and systems.

Learning methods and activities

Auditorium lectures and exercises (problems).

At least 8 exercises must be approved before the exam. 10-11 exercises will be given.

Compulsory assignments

  • Exercises

Further on evaluation

The written exam will be given in English, only. If there is a re-sit examination, this will normally be held in August and the examination form may be changed from written to oral.

Course materials

Ben G. Streetman and Sanjay K. Banerjee, "Solid State Electronic Devices", 7th ed. (or later) (Pearson Global Edition) Pearson Education Limited, 2016

Credit reductions

Course code Reduction From To
TFE4145 7.5 AUTUMN 2018
TFE4177 7.5 AUTUMN 2018
More on the course



Version: 1
Credits:  7.5 SP
Study level: Third-year courses, level III


Term no.: 1
Teaching semester:  AUTUMN 2024

Language of instruction: English

Location: Trondheim

Subject area(s)
  • Electronics
  • Materials Technology and Electrochemistry
  • Materials Science and Solid State Physics
  • Solid State Physics
  • Physical Electronics
  • Technological subjects
Contact information
Course coordinator: Lecturer(s):

Department with academic responsibility
Department of Electronic Systems


Examination arrangement: School exam

Term Status code Evaluation Weighting Examination aids Date Time Examination system Room *
Autumn ORD School exam 100/100 C INSPERA
Room Building Number of candidates
Summer UTS School exam 100/100 C INSPERA
Room Building Number of candidates
  • * The location (room) for a written examination is published 3 days before examination date. If more than one room is listed, you will find your room at Studentweb.

For more information regarding registration for examination and examination procedures, see "Innsida - Exams"

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